Production of a compensation region used in semiconductors comprises forming primary doping material depots of first p-conductivity in a first region in a laterally displaced manner, and diffusing out the primary doping material depots

摘要

Production of a compensation region comprises forming primary doping material depots (31, 32, 33) of first p-conductivity in a first region (21) or second n-conductivity in a semiconductor material region (20) in a laterally displaced manner, and diffusing out the primary doping material depots in the first region forming a compensation region as a superposition made from secondary doping material depots (31', 32', 33') produced from the primary doping material depots. Independent claims are also included for the following: (1) Compensation semiconductor component; and (2) Process for the production of the compensation semiconductor component.