Self-adjusted dual polysilicon bipolar transistor has collector region, sub-collector region, base region, emitter region and carbon doped region on first side next to collector region

摘要

The device has a collector region (25) of a first conductor type, a sub-collector region (10) of the first type electrically connected to a first side of the collector region, a base region (30) of a second conductor type on the second side of the collector region, an emitter region (50) of the first conductor type above the base region remote from the collector region and a carbon doped semiconducting region on the first side next to the collector region.