Preparation of thin layer capacitor low leakage current and high breakdown voltage, for use in microfabrication technology,

摘要

The preparation of a thin layer capacitor (10) with a dielectric material (4) between a lower plate (sic) electrode (3) and an upper plate electrode (7), ensures low leakage current and a high breakdown voltage. The preparation of a thin layer capacitor (10) with a dielectric material (4) between a lower plating (sic) electrode (3) and an upper plating electrode (7), which ensures low leakage current and a high breakdown voltage, involves: the formation of a lower plating electrode (3) on a specific region of a lower plating seed layer (2), which is formed over the whole surface of a substrate (1), including the lower plating electrode (3); formation of photopaint layer (R) on dielectric material (4), which is not coated via layer R, and by removal of the lower plating electrode (2) under the dielectric material (4); uncovering of the dielectric material (4) on the lower electrode (3) by removal of photo-paint layer (R); formation of a photopaint bridge (5) which determines the capacity of the capacitor, so that the borders cover the exposed dielectric material (4) and the exposed substrate (1); formation of an upper plating film layer (6) over the photopaint (5) and dielectric material (4); and formation of an upper plating electrode (7) on the upper plating seed layer (6).