Semiconductor device, e.g. gate-commutated thyristor with press-contact structure, has protruding contact section formed on gate electrode for making contact with press-contact carrier block

摘要

A semiconductor substrate has a gate electrode (1a,1a') and a cathode electrode (1b) on one side, and an anode electrode on the other side. The gate electrode faces a press-contact carrier block (6). A protruding contact section (1a') is formed on the gate electrode for making contact with the press-contact carrier block. An insulating layer (1d) is formed on the surface of the gate electrode and extends to a point adjacent to the protruding contact. An independent claim is included for a further semiconductor device.