Semiconductor memory module e.g. flash memory module e.g. for mobilephones, BIOS for computers, uses discharge circuit for discharging voltage levels of bit-lines in reaction to flag signal

摘要

A semiconductor memory module has a first and second bit-lines (BLO;GBLO), a signal generator for generating a flag signal indicating the bundle read process and an address generator (200). A first column selection circuit (140) selects in reaction to the addresses a part of the number of first bit-lines to connect these with second bit-lines, and a discharge circuit for discharging voltage levels of the second bit-lines in reaction to the flag signal. Independent claims are also included for the following: (I) An operating method for a non-volatile semiconductor memory module.(II) A read method for cells in a non-volatile semiconductor memory module.