首页> 外国专利> METHOD OF FORMING HIGHLY ORIENTED CARBON NANOTUBE AND APPARATUS SUITABLE FOR FORMING HIGHLY ORIENTED CARBON NANOTUBE

METHOD OF FORMING HIGHLY ORIENTED CARBON NANOTUBE AND APPARATUS SUITABLE FOR FORMING HIGHLY ORIENTED CARBON NANOTUBE

机译:形成高取向碳纳米管的方法和适用于形成高取向碳纳米管的装置

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a highly oriented carbon nanotube (CNT) thin film by a plasma CVD method and an apparatus suitable for forming the highly oriented CNT thin film by the plasma CVD method.;SOLUTION: A catalyst containing at least one of metals of Fe, Co, Ni, Ga, In(ITO), Al and Sn is stuck on the surface of a substrate 10. The substrate 10 on which the catalyst is stuck is held with a substrate holding part 5 arranged in a chamber 2. A carbon-containing gas is supplied to the chamber 2 and plasma electrons are generated inside the chamber 2 from a microwave generation part 6 so as not to directly irradiate the substrate 10. As the apparatus suitable for the method, a shielding member 7 is provided between the substrate holding part 5 and the microwave generation part 6.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种通过等离子体CVD方法形成高取向碳纳米管(CNT)薄膜的方法以及一种适合通过等离子体CVD方法形成高取向碳纳米管薄膜的设备。 Fe,Co,Ni,Ga,In(ITO),Al和Sn中的至少一种金属粘附在基板10的表面上。粘附有催化剂的基板10通过布置有基板保持部5来保持。在腔室2内向腔室2内供给含碳气体,并从微波产生部6在腔室2内产生等离子体电子,以不直接照射基板10。在基板保持部5与微波产生部6之间设置有屏蔽部件7。版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005213104A

    专利类型

  • 公开/公告日2005-08-11

    原文格式PDF

  • 申请/专利权人 NEW INDUSTRY RESEARCH ORGANIZATION;

    申请/专利号JP20040022748

  • 发明设计人 OMAE NOBUO;TAGAWA MASAHITO;

    申请日2004-01-30

  • 分类号C01B31/02;B82B3/00;C23C16/27;

  • 国家 JP

  • 入库时间 2022-08-21 22:37:16

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