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PHASE TRANSITION TYPE OPTICAL INFORMATION RECORDING MEDIUM AND TWO LAYERED PHASE TRANSITION TYPE OPTICAL INFORMATION RECORDING MEDIUM

机译:相变型光学信息记录介质和两层相变型光学信息记录介质

摘要

PROBLEM TO BE SOLVED: To prevent corrosion of a reflection layer and to equalize recording and reproducing characteristics and intensity of respective signals in respective recording layers, in a phase transition type optical information recording medium having two recording layers.;SOLUTION: In the phase transition type optical recording medium, a first dielectric layer, a phase transition type recording layer, a second dielectric layer and a reflective layer are laminated on a transparent first substrate in this order, the phase transition type recording layer comprises a thin layer having 5 to 16 nm film thickness and comprising mainly an alloy represented by the composition formula GexSbyTez (wherein x, y and z represent respectively an atomic %, and x, y and z satisfy respectively the following equations: 3.5≤x≤10, 70≤y≤80 and z=100-x-y) and the second dielectric layer comprises a thin film having 10 to 30 nm film thickness and comprising mainly a compound oxide of Nb2O5 and ZrO2 and/or ZnO.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:在具有两个记录层的相变型光学信息记录介质中,为了防止反射层的腐蚀并使各记录层中的各信号的记录和再现特性和强度相等,解决方案:在相变中光学记录介质,第一介电层,相变型记录层,第二介电层和反射层依次层叠在透明的第一基板上,该相变型记录层包括具有5至16的薄层膜厚为11nm,并且主要包含由组成式GexSbyTez表示的合金(其中,x,y和z分别表示原子%,并且x,y和z分别满足以下方程:3.5&x; 10、70&y; 80和z = 100-xy),第二介电层包括薄膜厚度为10至30 nm的薄膜,主要包含Nb < Sub> 2 O 5 和ZrO 2 和/或ZnO。版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2005302264A

    专利类型

  • 公开/公告日2005-10-27

    原文格式PDF

  • 申请/专利权人 RICOH CO LTD;

    申请/专利号JP20050013298

  • 申请日2005-01-20

  • 分类号G11B7/24;B41M5/26;

  • 国家 JP

  • 入库时间 2022-08-21 22:35:54

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