首页> 外国专利> METHOD FOR INTRODUCING HETERO-ATOMS INTO DIAMOND, DIAMOND, TRANSISTOR ELEMENT USING DIAMOND, ELECTRON EMITTING ELEMENT, AND LIGHT EMITTING ELEMENT

METHOD FOR INTRODUCING HETERO-ATOMS INTO DIAMOND, DIAMOND, TRANSISTOR ELEMENT USING DIAMOND, ELECTRON EMITTING ELEMENT, AND LIGHT EMITTING ELEMENT

机译:将异质原子引入金刚石,金刚石,使用金刚石的晶体管元件,电子发射元件和发光元件的方法

摘要

PROBLEM TO BE SOLVED: To obtain a technique for controlling the concentration of hetero-atoms and introducing the atoms while avoiding damage of a diamond which can control semiconductor electron transfer characteristics, and also to realize an electronic element which can use the diamond as an electron transfer material.;SOLUTION: In a hetero-atoms introducing method for generating ions, extracting the ions from an ion source, mass separating the ions, converging the ions, deflecting the ions, decelerating the ions, and irradiating a diamond substance with the ions to introduce the hetero-ions into the substance; a vacuum container for applying the ions has a vacuum level of 1×10-6 Pa or less, and the diamond is irradiated with the ions other than the constituent elements of the diamond at an energy level of 100eV or less.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:获得一种用于控制杂原子的浓度并引入原子,同时避免破坏可控制半导体电子传递特性的金刚石的技术,并且实现一种可将金刚石用作电子的电子元件。解决方案:在一种杂原子引入方法中,该方法用于生成离子,从离子源中提取离子,质量分离离子,使离子会聚,使离子偏转,使离子减速以及向离子照射金刚石物质。将杂离子引入物质;用于施加离子的真空容器的真空度为1×10 -6 Pa或更低,并且用能量为100eV的金刚石组成元素以外的离子照射金刚石。或更少。版权所有:(C)2005,JPO&NCIPI

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