首页> 外国专利> PHOTOMASK FOR NEAR FIELD LIGHT EXPOSURE, METHOD FOR CONTROLLING INTENSITY DISTRIBUTION OF NEAR FIELD LIGHT USING THE PHOTOMASK, AND METHOD AND DEVICE FOR FORMING PATTERN

PHOTOMASK FOR NEAR FIELD LIGHT EXPOSURE, METHOD FOR CONTROLLING INTENSITY DISTRIBUTION OF NEAR FIELD LIGHT USING THE PHOTOMASK, AND METHOD AND DEVICE FOR FORMING PATTERN

机译:用于近场光曝光的光掩模,使用该光掩模控制近场光的强度分布的方法,以及形成图案的方法和装置

摘要

PROBLEM TO BE SOLVED: To provide a photomask for near-field light exposure, a method for controlling the intensity distribution of near-field light using the photomask, and a method and a device for forming pattern capable of controlling the intensity distribution of near-field light to an arbitrary intensity distribution.;SOLUTION: A photomask for near-field light exposure for controlling the intensity distribution of near-field light is provided with a microaperture whose aperture width is less than 1/2 of an optical source wavelength of an exposure light. A recess or protrusion 104 is provided near the microaperture 103. The intensity distribution of near-field light can be controlled to an arbitrary intensity distribution by the recess or the protrusion.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:为了提供用于近场光曝光的光掩模,使用该光掩模控制近场光的强度分布的方法,以及形成能够控制近场光的强度分布的图案的方法和装置。解决方案:一种用于控制近场光强度分布的近场光曝光光罩,其微孔的孔径宽度小于光源波长的1/2。曝光灯。在微孔103附近设置有凹部或突起104。可以通过该凹部或突起将近场光的强度分布控制为任意的强度分布。版权所有:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2004335905A

    专利类型

  • 公开/公告日2004-11-25

    原文格式PDF

  • 申请/专利权人 CANON INC;

    申请/专利号JP20030132517

  • 发明设计人 MIZUTANI NATSUHIKO;INAO YASUHISA;

    申请日2003-05-12

  • 分类号H01L21/027;G03F1/16;

  • 国家 JP

  • 入库时间 2022-08-21 22:31:46

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