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Method and latch circuit for implementing enhanced performance with reduced quiescent power dissipation using mixed threshold CMOS devices
Method and latch circuit for implementing enhanced performance with reduced quiescent power dissipation using mixed threshold CMOS devices
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机译:用于使用混合阈值CMOS器件以降低的静态功耗实现增强性能的方法和锁存电路
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摘要
A method and latch circuit are provided for implementing enhanced performance with reduced quiescent power dissipation using mixed threshold CMOS devices. A latch circuit includes critical data and clock paths and non-critical sections. A low voltage threshold (LVT) transistor is used only in the critical data and clock paths. The non-critical sections are implemented with regular VT, (RVT), or low leakage (LLD) transistors. The latch circuit advantageously is implemented using LVT devices in the internal critical paths of the latch and RVT output buffer transistors.
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