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Semiconductor process yield analysis based on evaluation of parametric relationship

机译:基于参数关系评估的半导体工艺良率分析

摘要

Semiconductor process yield analysis in which the relationship between a wafer-level parameter and a die-level parameter is evaluated can be performed more quickly and with greater accuracy than has been the case with previous such yield analysis. The yield analysis can be performed by selecting regions of a semiconductor wafer or wafers from which parametric data is to be obtained for use in the analysis, based on one or more characteristics of the wafer(s). The yield analysis can be performed by grouping the parametric data based on both a grouping of the wafer-level parametric data and a grouping of the die-level parametric data. The yield analysis can be performed by grouping the parametric data in greater than 3 groups.
机译:与以前的这种成品率分析相比,可以更快,更准确地执行评估晶片级参数和管芯级参数之间的关系的半导体工艺成品率分析。可以通过基于一个或多个晶片的一个或多个特性,选择要从中获取参数数据以用于分析的一个或多个半导体晶片的区域来执行成品率分析。可以通过基于晶片级参数数据的分组和管芯级参数数据的分组来对参数数据进行分组来执行成品率分析。可以通过将参数数据分为3组以上来执行产量分析。

著录项

  • 公开/公告号US6885955B1

    专利类型

  • 公开/公告日2005-04-26

    原文格式PDF

  • 申请/专利权人 NICKEY JOE ATCHISON;

    申请/专利号US20030402774

  • 发明设计人 NICKEY JOE ATCHISON;

    申请日2003-03-28

  • 分类号G01N37/00;G01D18/00;G01R31/26;

  • 国家 US

  • 入库时间 2022-08-21 22:19:50

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