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Methods of forming silicon-on-insulator comprising integrated circuitry, and wafer bonding methods of forming silicon-on-insulator comprising integrated circuitry
Methods of forming silicon-on-insulator comprising integrated circuitry, and wafer bonding methods of forming silicon-on-insulator comprising integrated circuitry
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机译:形成包括集成电路的绝缘体上硅的方法,以及形成包括集成电路的绝缘体上硅的晶片键合方法
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摘要
A wafer bonding method of forming silicon-on-insulator comprising integrated circuitry includes nitridizing at least a portion of an outer surface of silicon of a device wafer. After the nitridizing, the device wafer is joined with a handle wafer. A method of forming silicon-on-insulator comprising integrated circuitry includes nitridizing an interface of the silicon comprising layer of silicon-on-insulator circuitry with the insulator layer of the silicon-on-insulator circuitry. After the nitridizing, a field effect transistor gate is formed operably proximate the silicon comprising layer. Other methods, are disclosed. Integrated circuitry is contemplated regardless of the method of fabrication.
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