Integrated circuit formed by removing undesirable second oxide while minimally affecting a desirable first oxide

摘要

The present invention relates generally to removing an undesirable second oxide, while minimally affecting a desirable first oxide, on an integrated circuit. The integrated circuit may be part of a larger system.;The second oxide is first converted to another material, such as oxynitride. The other material has differing characteristics, such as etching properties, so that it can then be removed, without substantially diminishing the first oxide.;The conversion may be accomplished by heating. Heating may be accomplished by rapid thermal or furnace processing. Subsequently, the other material is removed from the integrated circuit, for example by hot phosphoric etching, so that the desirable first oxide is not substantially affected.