MASK, MASK BLANK AND FABRICATING METHOD THEREOF TO IMPROVE POSITION PRECISION AND DIMENSION PRECISION OF MASK PATTERN

摘要

PURPOSE: A mask is provided to improve position precision and dimension precision of a mask pattern by reducing warping of a mask due to compression stress of the first silicon oxide layer. CONSTITUTION: A silicon substrate is prepared. At least one substrate opening is formed in a part of the silicon substrate. The first silicon oxide layer is formed on one surface of the silicon substrate. A single crystalline silicon layer is formed on the first silicon oxide layer and the substrate opening. An exposure beam passes through at least one opening formed in a part of the single crystalline silicon layer on the substrate opening. A stress control layer has inner stress for planarizing the warping of the silicon substrate caused by the compression stress of at least the first silicon oxide layer, formed on the other surface of the silicon substrate.