首页> 外国专利> IMPROVED ION SOURCE WITH MULTI-CUSPED MAGNETIC FIELDS AND A PLASMA ELECTRODE FOR USE IN THE ION SOURCE

IMPROVED ION SOURCE WITH MULTI-CUSPED MAGNETIC FIELDS AND A PLASMA ELECTRODE FOR USE IN THE ION SOURCE

机译:具有多峰磁场和等离子电极的改进的离子源

摘要

An ion source 26 including a plasma confinement chamber 49 and a plasma electrode 70 forming a generally planar wall section 52 of the plasma confinement chamber 49. The plasma electrode 70 has at least one opening 84 for allowing an ion beam 88 to exit the confinement chamber 49 and has a set of magnets 78, 80 that generate a magnetic field 94 extending across the openings in the plasma electrode. The openings in the plasma electrode 70 can be fashioned as elongated slots or circular openings aligned along an axis. The ion source 26 can further include a power supply 72 for negatively biasing the plasma electrode 70 relative to the plasma confinement chamber 49 and an insulator 74 for electrically insulating the plasma electrode. Cooling tubes 122 can also be provided to transfer heat away from the magnets in the plasma electrode 70. IMAGE
机译:离子源26,其包括等离子体限制室49和形成等离子体限制室49的大体上平坦的壁部分52的等离子体电极70。等离子体电极70具有至少一个用于允许离子束88离开限制室的开口84。磁体49、49具有一组磁体78、80,其产生跨过等离子体电极中的开口延伸的磁场94。等离子体电极70中的开口可以形成为沿轴线对准的细长槽或圆形开口。离子源26可以进一步包括用于使等离子体电极70相对于等离子体限制室49负偏压的电源72和用于使等离子体电极电绝缘的绝缘体74。还可以设置冷却管122,以将热量从等离子电极70中的磁体转移走。

著录项

  • 公开/公告号KR100459533B1

    专利类型

  • 公开/公告日2004-12-03

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR19990018015

  • 申请日1999-05-19

  • 分类号H01J27/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:16

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