WAFER CLEANING METHOD SIMULTANEOUSLY USING CHEMICAL AND PHYSICAL METHODS TO EFFECTIVELY ELIMINATE PARTICLES ON WAFER

摘要

PURPOSE: A wafer cleaning method simultaneously using chemical and physical methods is provided to effectively eliminate the particles on a wafer as compared with a conventional technique using only a physical method without etch damage to each layer formed on the wafer. CONSTITUTION: A wafer on which a metal layer is formed is cleaned. A diluted ammonia water in which pure water and ammonia water of 30 weight percent are mixed in a volume ratio of 50:1 to 1000:1 and a megasonic generator are simultaneously used. The diluted ammonia water is put into a receptacle including the megasonic generator in its bottom. The wafer is dipped into the receptacle for a predetermined interval of time.