首页> 外国专利> SEMICONDUCTOR MANUFACTURING APPARATUS HAVING ULTRAVIOLET LIGHT IRRADIATION MECHANISM, AND TREATMENT METHOD OF SEMICONDUCTOR SUBSTRATE BY ULTRAVIOLET LIGHT IRRADIATION

SEMICONDUCTOR MANUFACTURING APPARATUS HAVING ULTRAVIOLET LIGHT IRRADIATION MECHANISM, AND TREATMENT METHOD OF SEMICONDUCTOR SUBSTRATE BY ULTRAVIOLET LIGHT IRRADIATION

机译:具有紫外线照射机理的半导体制造装置以及紫外线照射半导体基体的处理方法

摘要

PROBLEM TO BE SOLVED: To provide a method and apparatus for controlling a dielectric constant of a thin film evaporated on a substrate by ultraviolet light irradiation.;SOLUTION: Treatment apparatus of a semiconductor substrate includes a chamber 6 where pressure can be controlled in a range of vacuum to the vicinity of atmospheric pressure; a plurality of ultraviolet light-emitting bodies 8 set in the chamber 6; a heater 12 set in the chamber 6 facing the light-emitting bodies 8; and a filter 9 disposed between the light-emitting bodies 8 and the heater 12, the filter for making intensity of the ultraviolet light uniform; and in addition, has a structure for uniformly distributing the intensity of light from the light-emitting bodies 8 on the surface of the heater 12.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种通过紫外线照射来控制在基板上蒸发的薄膜的介电常数的方法和装置。解决方案:半导体基板的处理装置包括腔室6,在腔室6中可以将压力控制在一定范围内。真空至大气压附近;在腔室6内设置有多个紫外线发光体8。加热器12设置在面对发光体8的腔室6中。滤光器9设置在发光体8与加热器12之间,该滤光器用于使紫外线强度均匀。并且具有在加热器12的表面上均匀地分布来自发光体8的光的强度的结构。版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006203191A

    专利类型

  • 公开/公告日2006-08-03

    原文格式PDF

  • 申请/专利权人 ASM JAPAN KK;

    申请/专利号JP20050377123

  • 发明设计人 OBARA NAOKI;

    申请日2005-12-28

  • 分类号H01L21/31;H01L21/312;H01L21/316;

  • 国家 JP

  • 入库时间 2022-08-21 21:54:22

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