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Mura defect inspection mask, apparatus and method of inspecting the mura defect, and method of producing a photomask

机译:Mura缺陷检查掩模,检查Mura缺陷的设备和方法以及制造光掩模的方法

摘要

Plural repetitive patterns 61 are formed on a transparent substrate 62 in the unit of a chip 65. Each of the repetitive patterns has plural pseudo mura defects 66 to which intensities of mura defects occurring in a predetermined repetitive pattern are allocated with being stepwise changed, for respective kinds of the mura defects. The mura defects are a CD Mura based on an abnormality in critical dimension of unit patterns 63 in the repetitive patterns, a Pitch Mura based on an abnormality in interval of the repetitive patterns, a Butting Mura-based on a positional displacement of the repetitive patterns, and a Defect mura based on a pattern defect of unit patterns in the repetitive patterns.
机译:在芯片 65 的单元中,在透明基板 62 上形成多个重复图案 61 。每个重复图案具有多个伪Mura缺陷 66 ,对于每种Mura缺陷,以预定的重复图案出现的Mura缺陷的强度被逐步改变地分配给该伪Mura缺陷。 mura缺陷是基于重复图案中单元图案 63 的临界尺寸异常的CD Mura,基于重复图案间隔异常的Pitch Mura,基于Butting Mura的CD Mura。重复图案的位置偏移,以及基于重复图案中单位图案的图案缺陷的缺陷mura。

著录项

  • 公开/公告号US2005280805A1

    专利类型

  • 公开/公告日2005-12-22

    原文格式PDF

  • 申请/专利权人 MAKOTO MURAI;

    申请/专利号US20050139970

  • 发明设计人 MAKOTO MURAI;

    申请日2005-05-31

  • 分类号G01N21/88;

  • 国家 US

  • 入库时间 2022-08-21 21:44:23

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