u=(Cc/Ca)×(Wa/Wc) (1)where, Cc is a count number of a peak of a (00l′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (00l′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement."/>
Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
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Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
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机译:电介质膜结构,使用电介质膜结构的压电致动器和喷墨头
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摘要
The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2:u=(Cc/Ca)×(Wa/Wc) (1)where, Cc is a count number of a peak of a (00l′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (00l′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
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机译:本发明提供了一种电介质膜结构,其具有基板和设置在该基板上的电介质膜,并且该电介质膜相对于基板具有(001)面取向,并且其中在下式(1)中的值u关于介电膜的实数大于2:<?in-line-formulae description =“ In-line Formulae” end =“ lead”?> u I> =( C I> c Sub> / C I> a Sub>)×( W I> a Sub> / W I> c Sub >)(1)<?in-line-formulae description =“ In-line Formulae” end =“ tail”?>其中,C c Sub>是在面外X射线衍射测量中介电膜的(00l')面的峰的计数(此处,l'是选择的自然数)因此C c Sub>变为最大值); C a Sub>是在面内X射线衍射测量中介电膜的(h'00)面的峰的计数(这里,h'是选择为C的自然数) c Sub>变为最大值); W c Sub>是在面外摇摆曲线X射线衍射测量中电介质膜的(00l')面的峰的半值宽度; W a Sub>是面内摇摆曲线X射线衍射测定中的介电膜的(h'00)面的峰的半值宽度。
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