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Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
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机译:利用通过工件施加的源功率和偏置功率频率进行金属等离子体气相沉积和再溅射的设备和方法
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摘要
Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.
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