首页> 外国专利> Method of forming floating structure of substrate and method of manufacturing floating gate electrode and field emission device employing the floating structure

Method of forming floating structure of substrate and method of manufacturing floating gate electrode and field emission device employing the floating structure

机译:形成衬底的浮置结构的方法以及制造浮置栅电极的方法和采用该浮置结构的场致发射器件

摘要

A method of forming a floating structure lifting up from a substrate and a method of manufacturing a field emission device (FED) employing the floating structure are provided. The method of forming a floating structure includes forming an expansion causer layer (102), which can generate a byproduct from the reacting with a predetermined reactant gas causing volume expansion, on the substrate; forming an object material layer (103) for the floating structure on a resultant stack; forming a hole (103') through which the reactant gas is supplied on a resultant stack; supplying the reactant gas through the hole so that the object material layer partially lifts up from the substrate due to the byproduct (104) generated from the reaction of the expansion causer layer with the reactant gas; and removing the byproduct through the hole so that the portion of the object material layer lifting up from the substrate can be completely separated from the substrate to form the floating structure.
机译:提供一种形成从基板上抬起的浮动结构的方法以及一种使用该浮动结构的场致发射器件(FED)的制造方法。形成浮动结构的方法包括:在基板上形成膨胀起因层(102),该膨胀起因层可以从与预定的反应气体的反应中产生副产物而引起体积膨胀。在所得叠层上形成用于浮置结构的目标材料层(103);形成孔(103′),通过该孔将反应气体供应到所得的叠层上;通过该孔供给反应气体,以使膨胀剂层与反应气体反应生成的副产物(104)使目标材料层部分地从基板上剥离。通过孔除去副产物,使得目标材料层从基板上抬起的部分可以与基板完全分离以形成浮动结构。

著录项

  • 公开/公告号EP1321958B1

    专利类型

  • 公开/公告日2006-06-28

    原文格式PDF

  • 申请/专利权人 SAMSUNG SDI CO LTD;

    申请/专利号EP20020256796

  • 发明设计人 HAN IN-TAEK;PARK YOUNG-JUN;

    申请日2002-09-30

  • 分类号H01J1/304;

  • 国家 EP

  • 入库时间 2022-08-21 21:30:58

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