A Method for manufacturing of Bottom Gate type p-Si Thin Film Transistor Device

摘要

In the present invention, to provide a method of manufacturing the bottom-gate type thin film transistor element of the process is simplified by using the etching rate difference between the amorphous silicon and polysilicon for manufacturing a semiconductor layer made of polysilicon without further separate photolithography process bottom, and it characterized in that it provides a process for the preparation of the gate type polysilicon thin film transistor element, and thus has the advantage that the product yield improvement through process simplification and reduced manufacturing costs.