首页> 外国专利> SOI STRUCTURE SINGLE EVENT TOLERANCE INVERTER, NAND ELEMENT, NOR ELEMENT, SEMICONDUCTOR MEMORY ELEMENT, AND DATA LATCH CIRCUIT

SOI STRUCTURE SINGLE EVENT TOLERANCE INVERTER, NAND ELEMENT, NOR ELEMENT, SEMICONDUCTOR MEMORY ELEMENT, AND DATA LATCH CIRCUIT

机译:SOI结构单事件容差逆变器,NAND元,NOR元,半导体存储器元和数据锁存电路

摘要

Disclosed is an inverter, a NAND element, a NOR element, a memory element and a data latch circuit which exhibit high tolerance to single event effect (SEE). In an SEE tolerant inverter (3I), each of a p-channel MOS transistor and a n-channel MOS transistor which form an inverter is connected in series with an additional second transistor of the same conductive type as that thereof so as to form a double structure (3P1, 3P2; 3N1, 3N2). Further, a node A between the two p-channel MOS transistors and a node (B) between the two n-channel MOS transistors are connected together through a connection line. Each of an SEE tolerant memory element and an SEE tolerant data latch circuit comprises this SEE tolerant inverter (3I).
机译:公开了一种反相器,NAND元件,NOR元件,存储元件和数据锁存电路,其对单事件效应(SEE)表现出高容忍度。在耐SEE反相器(3I)中,构成反相器的p沟道MOS晶体管和n沟道MOS晶体管分别与与其导电类型相同的另一第二晶体管串联连接,以形成双重结构(3P1、3P2; 3N1、3N2)。此外,两个p沟道MOS晶体管之间的节点A和两个n沟道MOS晶体管之间的节点(B)通过连接线连接在一起。 SEE容忍存储元件和SEE容忍数据锁存电路中的每一个都包括该SEE容忍反相器(3I)。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号