首页> 外国专利> FABRICATING METHOD OF PATTERNED SUBSTRATE AND FABRICATING METHOD OF LIGHT EMITTING DIODE OF USING THE SUBSTRATE

FABRICATING METHOD OF PATTERNED SUBSTRATE AND FABRICATING METHOD OF LIGHT EMITTING DIODE OF USING THE SUBSTRATE

机译:图案化基质的制备方法和使用该基质的发光二极管的制备方法

摘要

The present invention relates to a method of manufacturing a light emitting diode using the manufacturing method and the substrate of the patterned substrate , by using a nano powder is formed on the substrate after the pattern of the nanoscale, and growing a nitride semiconductor layer, to form a pattern of nano-scale on the surface of the nitride semiconductor layer is characterized in that raised the critical angle. ; According to the present invention, by forming the pattern of the nano-scale to the substrate, the potential in the nitride-based semiconductor layer grown on the substrate (Dislocation) or defects (Defect), etc. it is possible to reduce the gain of the high-quality nitride-based semiconductor crystalline number, and by giving the surface of the nitride semiconductor layer of the light emitting diode to form a pattern of nano-scale increase the critical angle of the surface, the light generated in the active layer reaches the nitride semiconductor layer, reducing the likelihood that consumption is again totally reflected by the inner element is able to line it is possible to improve the light extraction efficiency of the LED.
机译:发光二极管的制造方法技术领域本发明涉及一种发光二极管的制造方法,其使用所述制造方法和所述图案化基板的基板,通过在所述纳米级图案化之后在基板上形成纳米粉末,并生长氮化物半导体层,从而形成发光二极管。在氮化物半导体层的表面上形成纳米级图案的特征在于提高了临界角。 ;根据本发明,通过在基板上形成纳米级的图案,在基板上生长的氮化物系半导体层中的电位(位错)或缺陷(缺陷)等,可以降低增益。高质量的基于氮化物的半导体晶体数,并通过使发光二极管的氮化物半导体层的表面形成纳米级的图案来增加表面的临界角,从而在有源层中产生光到达氮化物半导体层,降低了消耗再次被内部元件完全反射的可能性,从而能够提高LED的光提取效率。

著录项

  • 公开/公告号KR100622819B1

    专利类型

  • 公开/公告日2006-09-04

    原文格式PDF

  • 申请/专利权人 LG ELECTRONICS INC.;

    申请/专利号KR20050096978

  • 发明设计人 BAE DUK KYU;CHOI JAE WAN;

    申请日2005-10-14

  • 分类号H01L33/00;

  • 国家 KR

  • 入库时间 2022-08-21 21:23:00

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