A process for the formation of a transition areas of foreign ions in an eeprom - flash cell by means of angle of inclination of - foreign ions - implantation

摘要

A process for the formation of a transition areas of foreign ions in an eeprom - flash cell, comprising the steps of:The formation of a tunnel oxide film (12) on a silicon substrate (11);The formation of a stack gate structure, in which a floating gate move (16), a dielectric film (14), a control gate (15) and an oxide film (16) are provided consecutively;Formation of a thin nitride film (21) on the structure obtained;subsequent formation of a first foreign ions area (18a) in the silicon substrate (11) by means of an angle of inclination of - foreign ions - implantation;The formation of an oxide film (22) of the partition on the side walls of the stack gate structure; andThe formation of a foreign ions in the first field (18a) contained in the second fremdionengbiet (18b) by means of an angle of inclination of - foreign ions - implantation, as a result of which the transition (18) in the silicon substrate (11) is formed.