首页> 外国专利> Transistor e.g. double diffusion MOS, has cell array with two active transistor cells separated by pitch, in which temperature sensor and transistor cell are located in close distance

Transistor e.g. double diffusion MOS, has cell array with two active transistor cells separated by pitch, in which temperature sensor and transistor cell are located in close distance

机译:晶体管例如双扩散MOS,具有单元阵列,其中的两个有源晶体管单元由间距隔开,其中温度传感器和晶体管单元相距很近

摘要

The transistor has a cell array with two active transistor cells separated by a pitch, and a temperature sensor in proximate to the cell array. An isolation structure with an isolation trench (70) electrically isolates the temperature sensor from the cell array. The temperature sensor and the transistor cell are located in closest distance, approximately to the pitch between active transistor cells within the cell array.
机译:该晶体管具有单元阵列,该单元阵列具有以节距隔开的两个有源晶体管单元,以及靠近该单元阵列的温度传感器。具有隔离沟槽(70)的隔离结构将温度传感器与单元阵列电隔离。温度传感器和晶体管单元的位置最接近,近似于单元阵列内有源晶体管单元之间的间距。

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