HIGH CONDUCTIVITY BURIED LAYER IN OPTICAL WAVEGUIDE

摘要

PROBLEM TO BE SOLVED: To provide enhanced device operating bandwidth and reduced power dissipation by providing an efficient current conduction path for injecting the carriers.;SOLUTION: An optical device (300) includes in sequence a silicon dioxide layer (304), a buried silicide layer (306), a contact layer (308) and a silicon surface layer (310). The surface layer (310) is selectively etched to form an exposed rib (312). An upper surface of the rib (312) is doped to form an elongate electrode (314) therealong. The surface layer (310) is selectively etched to the contact layer (308) in regions remote from the rib (312) to form via channels (316a, 316b) for making electrical connection to the contact layer (308). The rib (312) forms a waveguide along which radiation propagates. Charge carriers are injected into the rib (312) and induce refractive index changes in a central region (324) thereof where most of the radiation propagates along the rib (312).;COPYRIGHT: (C)2007,JPO&INPIT