The EUV radiation source which possesses the lithography device and the debris reduction system which possess the debris reduction system, and the method of making the debris lighten

摘要

The lithography device is disclosed. This device includes with the illumination system which supplies the radiation beam and the support structure which supports the pattern grant structure. This pattern grant structure is formed, in order to give pattern to section of the radiation beam. In addition as for this device, the baseplate support section and the pattern which support the baseplate it includes with the debris reduction system which makes the debris particle lighten which is formed to the occasion where at least one part of the projection system and the lithography device which project the beam which is granted to the target part of the baseplate is used. This debris reduction system impresses the magnetic field, in order for the electric charge debris particle to be lightened at least with that, is constituted.