首页> 外国专利> MULTISTAGE REGULATOR FOR CHARGE-PUMP BOOSTED VOLTAGE APPLICATIONS, NOT REQUIRING INTEGRATION OF DEDICATED HIGH VOLTAGE HIGH SIDE TRANSISTORS

MULTISTAGE REGULATOR FOR CHARGE-PUMP BOOSTED VOLTAGE APPLICATIONS, NOT REQUIRING INTEGRATION OF DEDICATED HIGH VOLTAGE HIGH SIDE TRANSISTORS

机译:用于电荷泵升压电压应用的多级调节器,不需要集成专用高压高侧晶体管

摘要

A multistage circuit for regulating the charge voltage or the discharge current of a capacitance of an integrated device at a certain charge-pump generated boosted voltage is implemented without integrating high voltage transistor structures having a type of conductivity corresponding to the same sign of the boosted voltage (high-side transistors). The multistage circuit current includes at least a first stage, and an output stage in cascade to the first stage and coupled to the capacitance. The first stage is supplied at an unboosted power supply voltage of the integrated device, and the output stage is supplied at an unregulated charge-pump generated boosted voltage. The first stage includes a transistor having a type of conductivity corresponding to an opposite sign of the boosted voltage and of the power supply voltage. The drain of the output stage transistor is coupled to the boosted voltage either through a resistive pull-up or a voltage limiter.
机译:在不集成具有与升压的相同符号相对应的导电类型的高压晶体管结构的情况下,实现了用于在某个电荷泵产生的升压电压下调节集成装置的电容的充电电压或放电电流的多级电路。 (高端晶体管)。多级电路电流至少包括第一级,以及级联到第一级并耦合到电容的输出级。第一级以集成设备的未提升电源电压供电,输出级以未调节的电荷泵产生的升压电压供电。第一级包括具有导电类型的晶体管,该导电类型对应于升压电压和电源电压的相反符号。输出级晶体管的漏极通过电阻上拉或电压限制器耦合到升压电压。

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