Ferroelectric film, semiconductor device, ferroelectric film manufacturing method, and ferroelectric film manufacturing apparatus

摘要

An object of the present invention is, while decreasing a relative dielectric constant of a ferroelectric film of Sr₂(Ta_1-xNb_x)O₇ (0≦x≦1), to increase an coercive electric field thereof. The present invention is a ferroelectric film manufacturing method, which includes a film forming step of, in a processing chamber at least an inner surface around a target of which is formed of the same component material as the target, forming a ferroelectric film by colliding ions in plasma with the target and depositing target atoms produced by the collision on a base, and a heating step of heating and oxidizing the ferroelectric film.