首页> 外国专利> STRUCTURE FOR CONNECTING WIRE-WOUND COIL FOR NONCONTACT ID DISCRIMINATING APPARATUS AND IC CHIP AND CONNECTING METHOD CONSTITUTING THE STRUCTURE

STRUCTURE FOR CONNECTING WIRE-WOUND COIL FOR NONCONTACT ID DISCRIMINATING APPARATUS AND IC CHIP AND CONNECTING METHOD CONSTITUTING THE STRUCTURE

机译:非接触式身份识别装置和IC芯片的绕线线圈的连接结构以及构成该结构的连接方法

摘要

An appropriate portion of a wire-bound coil (1) formed of a copper wire is placed on an Au film (3a), i.e., an outermost layer of a connecting terminal (3) of an IC chip (2), then, an electrode (4) is permitted to abut to the portion of the wire-bound coil (1) from above the portion, and is pressed, while making the electrode (4) generate heat by making current flow in the electrode. In this case, the wire-wound coil (1) to be connected has a wire diameter of Φ70μm±3μm, and has a polyurethane insulating film (1a) on the copper core wire (1b). The dimension of the IC chip (2) is □ 1,000μm, metallization of a connecting terminal (3) is Ti-W-Au, and the thickness of an outermost layer Au film (3a) is 10μm. An electrode (4), i.e., a heating/pressurizing means, is formed of W (tungsten), and performs indirect heating. The conditions of welding by using such means are; a welding voltage of 1.8V, a current carrying time of 0.5sec. and a welding pressure of 80g.
机译:将由铜线形成的绕线线圈(1)的适当部分放在Au膜(3a)上,即IC芯片(2)的连接端子(3)的最外层,然后,在使电极(4)通过使电流在电极中流动而发热的同时,使电极(4)从该部分的上方与线绕线圈(1)的该部分抵接并被按压。在这种情况下,要连接的绕线线圈(1)的线径为Φ70μm±3μm,并且在铜芯线(1b)上具有聚氨酯绝缘膜(1a)。 IC芯片(2)的尺寸为□1,000μm,连接端子(3)的金属化为Ti-W-Au,最外层Au膜(3a)的厚度为10μm。电极(4),即加热/加压装置,由W(钨)形成,并进行间接加热。用这种方法焊接的条件是:焊接电压为1.8V,载流时间为0.5秒。焊接压力为80g。

著录项

  • 公开/公告号WO2007116782A1

    专利类型

  • 公开/公告日2007-10-18

    原文格式PDF

  • 申请/专利权人 STAR ENGINEERING CO. LTD.;HOSHI KATSUJI;

    申请/专利号WO2007JP56554

  • 发明设计人 HOSHI KATSUJI;

    申请日2007-03-28

  • 分类号G06K19/077;G06K19/07;B42D15/10;

  • 国家 WO

  • 入库时间 2022-08-21 20:46:47

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