FABRICATION METHOD OF NANOCRYSTALLINE-SILICON IN SILICON-BASED NANOSTRUCTURE

摘要

A method for manufacturing a nano crystalline-silicon in a silicon-based nano structure is provided to control the size and density of a nano silicon nitride by employing a post-thermal process with respect to the nano silicon nitride at nitrogen gas atmosphere. Nitrogen gas is injected into a chamber of a vacuum state and then ionized therein. Nano silicon nitride is formed on a surface of a silicon substrate by using a sample current that is generated by the ionized nitrogen ion gas. The ionized nitrogen ion gas is generated by using a DC(Direct Current) ion gun of a hot-filament type. Nano crystalline-silicon is formed in the nano silicon nitride through a post-thermal process at nitrogen gas atmosphere.