首页> 外国专利> CHEMICAL ETCHING SOLUTION FOR TUNGSTEN OR AN ALLOY OF TUNGSTEN-TITANIUM

CHEMICAL ETCHING SOLUTION FOR TUNGSTEN OR AN ALLOY OF TUNGSTEN-TITANIUM

机译:钨或钨钛合金的化学蚀刻溶液

摘要

It for tungsten or is that a corrosive agent of a titanium-tungsten metal alloy is arranged to the titanium-tungsten metal alloy of one lower bump metal of erosion, it will not attack and silver metal composition of alloy solder bump is covered by a kind of tin-, by using a corrosive agent, hydrogen peroxide containing 2 to 30% by weight, 0.By weight, wherein stabilizer is a phosphoric acid or monophosphate and water to 001 to 10% stabilizer, and the weight of corrosive agent makes up the rest. Contain 2 to 30% hydrogen peroxide by weight as a main oxidant for a corrosive agent of tungsten or a titanium-tungsten metal alloy, 0.001 to 10% stabilizer by weight, the gross weight of water, corrosive agent make up the rest. Corrosive agent also can containing 5 to 30% hydrogen peroxide by weight, 0.01 to 5% stabilizer by weight, and the rest part of the weight by water filling. Stabilizer is a phosphoric acid or monophosphate. Phosphoric acid or phosphate are selected from one group, it includes an ammonium dihydrogen phosphate, a diammonium hydrogen phosphate, an ammonium phosphate, a monosodium phosphate, a disodium hydrogen phosphate, a sodium phosphate, a potassium dihydrogen phosphate, a dipotassium hydrogen phosphate, a tripotassium phosphate, a pyrophosphoric acid, a sodium pyrophosphoric acid, a potassium pyrogaelol phosphate and monoammonium pyrophosphoric acid. Corrosive agent is used to corrode a lower bump metal of a flip chip. Lower bump metal contains tungsten or titanium-tungsten metal alloy. One solder bump, a metal contact layer of lower bump metal, including a kind of copper/can-cover silver metal alloy.
机译:对于一种钨或侵蚀性较低的一种凸点金属的钛钨金属合金布置有钛钨金属合金的腐蚀剂,不会腐蚀而合金钎料的银金属成分被一种覆盖锡,通过使用腐蚀剂,过氧化氢含量为2至30%(重量),按重量计,其中稳定剂为磷酸或单磷酸盐和水,稳定剂为001%至10%,并且腐蚀剂的重量组成其余的部分。含有2至30%(重量)的过氧化氢作为钨或钛钨金属合金腐蚀剂的主要氧化剂,0.001至10%(重量)的稳定剂,水,腐蚀剂的总重量构成其余部分。腐蚀剂还可以包含按重量计5%至30%的过氧化氢,按重量计0.01%至5%的稳定剂,以及其余部分的重量通过充水来实现。稳定剂是磷酸或单磷酸盐。磷酸或磷酸酯选自磷酸二氢铵,磷酸氢二铵,磷酸铵,磷酸二氢钠,磷酸氢二钠,磷酸钠,磷酸二氢钾,磷酸氢二钾,磷酸三钾,焦磷酸,焦磷酸钠,焦酚磷酸钾和焦磷酸一铵。腐蚀剂用于腐蚀倒装芯片的下凸点金属。下凸点金属包含钨或钛钨金属合金。一个焊料凸块,是较低凸块金属的金属接触层,包括一种铜/可以覆盖的银金属合金。

著录项

  • 公开/公告号KR20070103855A

    专利类型

  • 公开/公告日2007-10-25

    原文格式PDF

  • 申请/专利权人 DONGWOO FINE-CHEM CO. LTD.;

    申请/专利号KR20060035720

  • 发明设计人 LEE JOON WOO;LEE JAE YOUN;

    申请日2006-04-20

  • 分类号C23F1/10;C23F1/44;C23F1/38;

  • 国家 KR

  • 入库时间 2022-08-21 20:33:25

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