Novel Flash Memory and its Manufacturing to Minimize the Cross-Talk Effect by Shielding Floating Gate Using Screen-Layer or Ground-Layer

摘要

The present invention relates to a manufacturing method and a flash memory architecture, and more particularly surrounding the floating gate using a barrier film or the ground relates to a flash memory structure and method for minimizing crosstalk (Cross-Talk) effect. ; the cross-talk effect by using a barrier film or the ground surrounding the floating gate according to the invention flash memory structure and manufacturing method of minimizing is, (a) a silicon substrate, a tunneling oxide layer, a floating gate, forming the control insulating film and a control gate sequentially material; (B) patterning the gate area, the gate mask; (C) implanting an impurity for forming the source and drain regions; (D) forming an insulating film is deposited; (E) forming a protection film is deposited; (F) removing the barrier film in the upper insulating film in the upper control gate using the anisotropic etching method; (G) removing the insulating film located on the upper control gate and connecting a protection film and a control gate via retardation (Silicidation) between Sicily; characterized in that it comprises a