METHOD DEVELOPMENT potash layers thick flat

摘要

a way to develop powerful flat potash seams, including u043eu043au043eu043du0442u0443u0440u0438u0432u0430u043du0438u0435 u0432u044bu0435u043cu043eu0447u043du043eu0433u043e block preparatory u0432u044bu0440u0430u0431u043eu0442u043au0430u043cu0438, and preparing the arrival of third generation, the development of clusters of cells with the abandonment of u043cu0435u0436u0434u0443u043au0430u043cu0435u0440u043du044bu0445 u043fu043eu0434u0430u0442u043bu0438u0432u044bu0445 u0446u0435u043bu0438u043au043eu0432, issuing a batted u0441u0438u043bu044cu0432u0438u043du0438u0442u0430 at the surface, the use of u0433u0430u043bu0438u0442u0430 in a u0437u0430u043au043bu0430u0434u043eu0447u043du043eu0433u043e material u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 orderonly cells that are initially mining code at the electoral u0434u0435u0439u0441u0442u0432u0438u00a0 of arrival, u0432u044bu043du0438u043cu0430u00a0 middle layer u0433u0430u043bu0438u0442u0430, then at the same time, earning the top and n u0438u0436u043du0438u0439 layers u0441u0438u043bu044cu0432u0438u043du0438u0442u0430 at drilling type and exhaust galit used as u0437u0430u043au043bu0430u0434u043eu0447u043du043eu0433u043e material u0434u043bu00a0 full bookmarks of cells offers and from the power u0433u0430u043bu0438u0442u0430 and of his u0440u0430u0437u0440u044bu0445u043bu0435u043du0438u00a0,with its unique and u043du0435u0437u0430u043bu043eu0436u0435u043du043du044bu0445 cells.