Read voltage adjusting method for e.g. nitride read only memory, involves utilizing adjusted read voltage or read voltage within adjusted voltage range in normal mode of memory to read data from memory cells

摘要

The method involves storing logic states of a set of states in a predetermined number of digits in memory areas. The memory areas are read one after another, where control information which is based on the predetermined number of digits is provided. The state information is compared with the control information. An adjusted read voltage or the adjusted read voltage range is determined based on the comparison results. The adjusted read voltage or the read voltage within the adjusted voltage range is utilized in a normal mode of a memory to read data from memory cells. An independent claim is also included for a semiconductor circuit arrangement comprising a non-volatile semiconductor memory.