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HALF-LIGHT CONSUMPTION WITH A STRUCTURE FOR THE MEASUREMENT OF QUESTIONS

机译:具有用于问题测量的结构的半光消耗

摘要

A semiconductor component having a structure for avoiding parallel-path currents in the semiconductor component includes a substrate of a first conductivity type having a surface. A plurality of separate wells of a second conductivity type with a more highly doped edge layer of the second conductivity type are disposed at the surface of the substrate and are isolated from one another by pn junctions. At least one of the wells is completely surrounded by an insulating well of the first conductivity type. The doping of the insulating well is higher than that of the substrate. A method for fabricating a semiconductor component is also provided.
机译:具有用于避免半导体部件中的平行路径电流的结构的半导体部件包括具有表面的第一导电类型的基板。具有第二导电类型的更高掺杂边缘层的多个第二导电类型的单独的阱设置在衬底的表面处,并且通过pn结彼此隔离。至少一个阱完全被第一导电类型的绝缘阱包围。绝缘阱的掺杂高于衬底的掺杂。还提供了一种用于制造半导体部件的方法。

著录项

  • 公开/公告号DE59914320D1

    专利类型

  • 公开/公告日2007-06-14

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE19995014320T

  • 发明设计人 WERNER WOLFGANG;

    申请日1999-01-27

  • 分类号H01L21/761;H01L27/08;H01L27/092;

  • 国家 DE

  • 入库时间 2022-08-21 20:28:37

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