photodetector a semi - driver device for detection multi - the spectrum of a radiation increasing implementing such a photodetector, and method of implementation of such a device

摘要

This photo - detector semi-conductor - conductor is constituted by a diode to at least two dense - junctions, comprising two outer layers (1, 2), respectively a first layer (1) type or of a type of doping, and a second layer (2) type or of a type of doping (e) opposite to the type of doping of the first layer (1), the width of the forbidden band of these two layers being determined as a function of the energy, and therefore of the wavelength or of the band of wavelengths that they are each intended to be detected, these two layers being separated from one another by an intermediate layer (3) of the same type or of the same type of doping than one of said first and second layers, said diode being subjected to a bias voltage of value adjustable between the two outer layers (1) and (2). the width of the forbidden band of the intermediate layer (3) is greater than that of the layer of which it has the same type of doping