METHOD FOR MEASURING DOPANT CONCENTRATION OF EPITAXIAL LAYER AND METHOD FOR MEASURING RESISTIVITY OF EPITAXIAL LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method for measuring a dopant concentration and resistivity which can measure a dopant concentration with accuracy and its repeated accuracy is also high in measuring the resistivity of the epitaxial layer, especially the epitaxial layer of a low resistance.;SOLUTION: The method for measuring the dopant concentration of epitaxial layer measures the dopant concentration of epitaxial layer which is formed on a silicon substrate and is of the same conductive type to the substrate, by using a C-V method, in which an electrode of 1.5 mm or smaller in diameter is formed on the epitaxial layer, and a C-V characteristic is obtained using the electrode, then the dopant concentration is measured.;COPYRIGHT: (C)2008,JPO&INPIT