PHASE-CHANGE LAYER WITH DIFFERENT CRYSTALLINE LATTICE STRUCTURE IN ONE LAYER AND ITS MANUFACTURING METHOD, AND PHASE-CHANGE MEMORY ELEMENT WITH TITANIUM-DIFFUSION PREVENTING MEANS AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a phase-change layer with different crystalline lattice structure in one layer and its manufacturing method, and a phase-change memory element with Ti-diffusion preventing means and its manufacturing method.;SOLUTION: The phase-change memory element has a switching element and a storage node connected thereto. The storage node S is equipped with sequentially stacked lower laminates 30, 30a; the phase-change layer 34; and upper laminates 36, 38. The phase-change layer 34 is formed of a single layer separated to an upper layer 34b and a lower layer 34a, and the crystalline lattice structure in the upper layer 34b is different from that in the lower layer 34a. The lower layer 34a is made of a doped chalcogenide layer, the upper layer 34b is an undoped chalcogenide layer, and the upper laminate has a sequentially stacked deposition layer 36 and an upper electrode 38.;COPYRIGHT: (C)2008,JPO&INPIT