Reflective layer sequence with a plurality of layers is deposited on the Group III / V compound semiconductor material on

摘要

The present invention relates to a reflective layer sequence is deposited Group III / V compound semiconductor material and method of manufacturing the reflective layer sequence in (4) above. A first layer comprising a phosphosilicate glass (1) is deposited on a semiconductor substrate (4) directly on here. A second layer comprising silicon nitride (2) is disposed thereon. Metal layer (3) is deposited followed.