Process process monitor method and the device of the plasma processed system due to plasma frequency measurement

摘要

Actual place monitor method of the process process which is utilized in the plasma processed system which possesses the plasma processed chamber is disclosed. This method includes the step which arranges the baseplate inside the plasma processed chamber. This method when the baseplate is arranged inside the plasma processed chamber, furthermore includes the step which strike processes the plasma inside the plasma processed chamber. This method exists after the plasma strike processing furthermore to include the step which acquires the plasma frequency which was measured, the plasma frequency which was measured when the plasma does not exist, has 1st value, when the plasma exists, 1st value at least has possessed 2nd it differs value. As for this method the plasma cycle numerical value which was measured the setting plasma cycle numerical range if it had come off, furthermore includes the step which correlates the plasma cycle numerical value which was measured with the attribute of the process.