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Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
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机译:使用统一技术将非易失性存储器与字节,页面和块写入以及同时的读写操作相结合
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摘要
A combination EEPROM and Flash memory is described containing cells in which the stacked gate transistor of the Flash cell is used in conjunction with a select transistor to form an EEPROM cell. The select transistor is made sufficiently small so as to allow the EEPROM cells to accommodate the bit line pitch of the Flash cell, which facilitates combining the two memories into memory banks containing both cells. The EEPROM cells are erased by byte while the Flash cells erased by block. The small select transistor has a small channel length and width, which is compensated by increasing gate voltages on the select transistor and pre-charge bitline during CHE program operation.
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