首页> 外国专利> Cells grown on rough fotosensu00ecveis orgu00e1nicas electrode with controlled morphology at the nanoscale

Cells grown on rough fotosensu00ecveis orgu00e1nicas electrode with controlled morphology at the nanoscale

机译:在粗糙的fotosens u00ecveis org u00e1nicas电极上生长的细胞具有纳米级的形态学控制

摘要

Cells grown on rough fotosensu00ecveis orgu00e1nicas electrode with controlled morphology at the nanoscale, a device and a method for manufacturing the optoeletru00f3nico optoeletru00f3nico device include a first electrode disposed on a substrate.An exposed surface of the first electrode having a quadratic surface roughness average of at least 30 nm and a variation of the height of at least 200 nm, and the first transparent electrode.A layer of a first material conformal organic semiconductor is deposited on the first electrode for placement in the vapor phase organic, the first semiconductor material as a material of small molecule. A layer of a second semiconductor material is deposited on the organic layer conformal.At least part of the second layer of organic semiconductor material is in direct contact with the layer conformal. A second electrode is deposited on the second layer of organic semiconductor material. The first organic semiconductor material is of the type or of the type electron donor for the second organic semiconductor material, which is of another type of material.
机译:在具有受控形貌的纳米级粗糙照相电极上生长的细胞,用于制造光电元件的装置和方法,包括设置在基板上的第一电极。第一电极的暴露表面具有至少30 nm的二次表面粗糙度和至少200 nm的高度变化以及第一透明电极。在第一电极上沉积一层第一材料共形有机半导体材料,以放置在有机气相中,第一种半导体材料是小分子材料。第二半导体材料层沉积在有机层保形层上。第二有机半导体材料层的至少一部分与该层保形层直接接触。第二电极沉积在有机半导体材料的第二层上。第一有机半导体材料是第二有机半导体材料的类型或电子给体的类型,第二有机半导体材料是另一种类型的材料。

著录项

  • 公开/公告号BRPI0605826A

    专利类型

  • 公开/公告日2008-03-04

    原文格式PDF

  • 申请/专利权人 THE TRUSTEES OF PRINCETON UNIVERSITY;

    申请/专利号BR2006PI05826

  • 发明设计人 FAN YANG;STEPHEN R. FORREST;

    申请日2006-12-28

  • 分类号H01L51/42;B82B1/00;H01L21/00;H01L27/30;

  • 国家 BR

  • 入库时间 2022-08-21 20:08:37

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