METHODS OF FORMING FIELD EFFECT TRANSISTORS, METHODS OF FORMING FIELD EFFECT TRANSISTOR GATES, METHODS OF FORMING INTEGRATED CIRCUITRY COMPRISING A TRANSISTOR GATE ARRAY AND CIRCUITRY PERIPHERAL TO THE GATE ARRAY, AND METHODS OF FORMING INTEGRATED CIRCUITRY COMPRISING A TRANSISTOR GATE ARRAY INCLUDING FIRST GATES AND SECOND GROUNDED ISOLATION GATES

摘要

The invention includes methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates. In one implementation, a method of forming a field effect transistor includes forming masking material over semiconductive material of a substrate. A trench is formed through the masking material and into the semiconductive material. Gate dielectric material is formed within the trench in the semiconductive material. Gate material is deposited within the trench in the masking material and within the trench in the semiconductive material over the gate dielectric material. Source/drain regions are formed. Other aspects and implementations are contemplated.