It provides a method associated with the system using the sublimation growth of silicon carbide seed. The system includes a crucible; Silicon carbide raw material composition located within the crucible; Seed holder located within the crucible (seed holder); A silicon carbide seed crystal located on said seed holder; For the vapor transfer to the seed crystal from the source material, and this ju growth direction within the furnace it comprises means for generating a main heat gradient set so that between the raw material composition and the seed crystal, the seed crystal is , macroscopic growth surface of said main column and a gradient of 70 degrees to form a 89.5 degree angle with respect to the main direction of growth, and on the crystallographic orientation (crystallographic orientation) of the seed crystal in the seed crystal is the c- axis of the crystal the main thermal gradients and to the state about 0 degrees to 2 degrees with the angle, characterized in that positioned on the seed holder.
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