Semiconductor body for use in diode and transistor such as FET and bi-polar transistor, has connecting line for contacting semiconductor region, where conductivity per unit of length of connecting line changes from value to another value

摘要

The semiconductor body (1) has a connecting line (21) for contacting a semiconductor region (2), where a conductivity per unit of length of the connecting line changes from a value (SW) to another value (S0). The region is electrically connected to the connecting line. The connecting line covers a number of conducting layers, which are connected by vertical contact points. An antiparallel connecting line is provided for contacting another semiconductor region, and is arranged parallel to the former connecting line. Independent claims are also included for the following: (1) a transistor (2) a method for designing a semiconductor body (3) a computer program product exhibiting a computer program for controlling a computer for accomplishing a method for designing a semiconductor body.