The gas manifold in order to use during epitaxial membrane forming

摘要

This invention, in order in order on the baseplate epitaxial layer to form at least to supply one accumulation gas and the carrier gas to the epitaxial chamber and the above-mentioned epitaxial chamber which are adapted, being another, from the accumulation gas manifold and the above-mentioned accumulation gas manifold which are adapted in order at least to supply one etching gas and the carrier gas to the above-mentioned epitaxial chamber, the etching gas manifold which is adapted, method for the epitaxial membrane kind of formation which is included, offers the system and the device. Also other various features are offered. Selective figure Figure 1