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Characteristic measuring method of the suffering measurement component and characteristic measuring method of the suffering

机译:痛苦测量部件的特征测量方法和痛苦的特征测量方法

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of correctly grasping the characteristic fluctuation of an element due to process condition or the like while suppressing the increase of chip area at minimum.;SOLUTION: In the semiconductor device, a plurality of series circuits constituted of conduction elements 121a, 122a and elements to be measured 121b, 122b are provided between a power supply potential VDD and a ground potential VSS. A test signal TEST is commonly supplied to the conduction elements 121a, 122a while election signals S1, S2 corresponding to the conduction elements, are supplied individually. Then, a mode is set so that the power consumption of a main circuit section comprised in the semiconductor device becomes zero or substantially a constant and, thereafter, the elements 121b, 122b to be measured are conducted sequentially to sequentially measure the power supply current, which is made to flow through the semiconductor device under this condition. According to this method, correctly knowing power consumption of the element to be measured becomes possible and, based on the correct acknowledgement, knowing characteristics of the element to be measure becomes possible.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种能够在最小限度地抑制芯片面积增加的同时正确地把握由于工艺条件等引起的元件的特性波动的半导体器件;解决方案:在该半导体器件中,多个串联电路在电源电势VDD和接地电势VSS之间设置有由导电元件121a,122a和被测量元件121b,122b构成的元件。将测试信号TEST共同提供给导电元件121a,122a,同时分别提供与导电元件相对应的选择信号S1,S2。然后,设置模式,使得半导体器件中包括的主电路部分的功耗变为零或基本恒定,然后,依次进行要测量的元件121b,122b,以依次测量电源电流,在这种条件下,它流过半导体器件。根据这种方法,可以正确知道待测元件的功耗,并且基于正确的确认,可以知道待测元件的特性。;版权所有:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP4328791B2

    专利类型

  • 公开/公告日2009-09-09

    原文格式PDF

  • 申请/专利权人 エルピーダメモリ株式会社;

    申请/专利号JP20060253941

  • 发明设计人 松原 靖;

    申请日2006-09-20

  • 分类号H01L21/66;G01R31/28;

  • 国家 JP

  • 入库时间 2022-08-21 19:39:04

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