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Integrated Circuits; Method for Manufacturing an Integrated Circuit; Method for Decreasing the Influence of Magnetic Fields; Memory Module
Integrated Circuits; Method for Manufacturing an Integrated Circuit; Method for Decreasing the Influence of Magnetic Fields; Memory Module
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机译:集成电路;制造集成电路的方法;减小磁场影响的方法;记忆体模组
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摘要
Embodiments of the invention relate generally to integrated circuits, to a method for manufacturing an integrated circuit, to a method for decreasing the influence of magnetic fields, and to a memory module. In an embodiment of the invention, an integrated circuit having a magnetic tunnel junction is provided. The magnetic tunnel junction may include a free layer with a magnetization orientation that is selected by the application of a write current through the magnetic tunnel junction, and a retention layer that retains the selectable magnetization orientation of the free layer at temperatures below a retention temperature.
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